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Journal of Nanophotonics • Open Access

Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth

Paper Abstract

We have devised and fabricated high-speed silicon-on-insulator resonant microring photodiodes. The detectors comprise a p-i-n junction across a silicon rib waveguide microring resonator. Light absorption at 1550 nm is enhanced by implanting the diode intrinsic region with boron ions at 350 keV with a dosage of 1 × 1013 cm−2. We have measured 3-dB bandwidths of 2.4 and 3.5 GHz at 5 and 15 V reverse bias, respectively, and observed an open-eye diagram at 5 gigabit/s with 5 V bias.

Paper Details

Date Published: 1 January 2011
PDF: 7 pages
J. Nanophoton. 5(1) 059507 doi: 10.1117/1.3666059
Published in: Journal of Nanophotonics Volume 5, Issue 1
Show Author Affiliations
Jason J. Ackert, McMaster Univ. (Canada)
Marco Fiorentino, Hewlett-Packard Labs. (United States)
Dylan F. Logan, McMaster Univ. (Canada)
Raymond Beausoleil, Hewlett-Packard Labs. (United States)
Paul E. Jessop, Wilfrid Laurier Univ. (Canada)
Andrew P. Knights, McMaster Univ. (Canada)

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