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Journal of Nanophotonics

Hybrid optically and electrically controllable field effect transistor based on manipulated nanoparticles
Author(s): Doron Abraham; Asaf Shahmoon; Amihai Meiri; Zeev Zalevsky
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Paper Abstract

The hybrid optically and electrically controllable field effect transistor is a novel device whose current-voltage (I-V) curve can be controlled by optical or electrical modulation of metallic nanoparticles. The basic structure of this transistor is similar to that of a junction gate field effect transistor, where the conventional gate contact is replaced by an array of nanoparticles located on the upper side of the p-n junction and parallel to the channel direction, whereas the source and the drain contacts remain the same. The deposition of the nanoparticles is achieved by self-assembly using the focused-ion-beam technology. The displacement of the nanoparticles along the air gap is performed either optically or electrically. Optical control is based on a special type of optical tweezers realized by guiding and confining light into a nanosize void structure in which the nanoparticle is placed. Electrical control via an external electric field tunes the nanoparticles. Control of the I-V curve controls the logic function of the device.

Paper Details

Date Published: 1 January 2011
PDF: 12 pages
J. Nanophoton. 5(1) 051825 doi: 10.1117/1.3646101
Published in: Journal of Nanophotonics Volume 5, Issue 1
Show Author Affiliations
Doron Abraham, Bar-Ilan Univ. (Israel)
Asaf Shahmoon, Bar-Ilan Univ. (Israel)
Amihai Meiri, Bar-Ilan Univ. (Israel)
Zeev Zalevsky, Bar-Ilan Univ. (Israel)


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