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Journal of Micro/Nanolithography, MEMS, and MOEMS

Stochastic exposure kinetics of extreme ultraviolet photoresists: simulation study
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Paper Abstract

The stochastic nature of extreme ultraviolet (EUV) resist exposure leads to variations in the resulting acid concentration, which leads to line-edge roughness (LER) of the resulting features. Using a stochastic resist simulator, we predicted the mean and standard deviation of the acid concentration for an open-frame exposure and fit the results to analytical expressions. The EUV resist exposure mechanism of the PROLTIH Stochastic Resist Simulator is first order, and an analytical expression for the exposure rate constant C allows prediction of the mean acid concentration of an open-frame exposure to about 1% accuracy over a wide range of parameter values. A second analytical expression for the standard deviation of the acid concentration also matched the output of the simulator to within about 1%. Given the assumptions of the PROLTIH Stochastic Resist Simulator, it is possible to use the results of this paper to predict the stochastic uncertainty in acid concentration for EUV resists, thus allowing optimization of resist processing and formulations and contributing to a comprehensive LER model.

Paper Details

Date Published: 1 July 2011
PDF: 12 pages
J. Micro/Nanolith. MEMS MOEMS 10(3) 033019 doi: 10.1117/1.3631753
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 10, Issue 3
Show Author Affiliations
Chris A. Mack, (United States)
James W. Thackeray, Dow Advanced Materials (United States)
John J. Biafore, KLA-Tencor Texas (United States)
Mark D. Smith, KLA-Tencor Texas (United States)

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