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Optical Engineering

Laser direct write of silicon nanowires
Author(s): James I. Mitchell; Se Jun Park; Charles A. Watson; Pornsak Srisungsitthisunti; Chookiat Tansarawiput; Minghao Qi; Eric A. Stach; Chen Yang; Xianfan Xu
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Paper Abstract

Using laser direct writing in combination with chemical vapor deposition to produce nanometer scale electronics holds several advantages over current large scale photolithography methods. These include single step electrical interconnect deposition, mask-less patterning, and parallel processing. When taken together they make quick production of individualized electronic circuits possible. This work demonstrates the ability of combining laser direct write and chemical vapor deposition to produce silicon wires a few hundred nanometers wide. Optimized parameters will be discussed, with a particular emphasis paid to the laser-material interactions. The feasibility for electronic applications will be shown by examining the deposition formation on a silicon dioxide surface without degrading the surface's integrity, and by evaluating the resistivity of the deposited silicon wires.

Paper Details

Date Published: 1 October 2011
PDF: 6 pages
Opt. Eng. 50(10) 104301 doi: 10.1117/1.3630225
Published in: Optical Engineering Volume 50, Issue 10
Show Author Affiliations
James I. Mitchell, Purdue Univ. (United States)
Se Jun Park, Purdue Univ. (United States)
Charles A. Watson, Purdue Univ. (United States)
Pornsak Srisungsitthisunti, Purdue Univ. (United States)
Chookiat Tansarawiput, Purdue Univ. (United States)
Minghao Qi, Purdue Univ. (United States)
Eric A. Stach, Purdue Univ. (United States)
Chen Yang, Purdue Univ. (United States)
Xianfan Xu, Purdue Univ. (United States)

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