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Optical Engineering

Different approximations of carrier statistics in middle-wavelength infrared HgCdTe photovoltaic devices with nonparabolic band
Author(s): Jun Wang; Xiaoshuang Chen; Weida Hu; Lin Wang; Yongguo Chen; Wei Lu; Faqiang Xu
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Paper Abstract

The optical bandgap and photoresponse characteristics of middle-wavelength infrared (MWIR) mercury-cadmium-telluride (HgCdTe) photodiodes have been performed based on a self-consistent solution of the Poisson's equation, the electron/hole continuity equations, and three-generation-recombination processes as Auger, Shockley-Read-Hall and optical generation recombination. Three different carrier-density approximations: (i) parabolic conduction-band approximation, (ii) Bebb's nonparabolic expression, and (iii) Harman's nonparabolic approximation, are proposed to calculate the optical bandgap and photoresponse of MWIR HgCdTe photovoltaic devices by considering the carrier degeneracy and the nonparabolic conduction band. It is found that omitting nonparabolic effect can lead to an enormous deviation in the simulation result, especially for heavily doped HgCdTe devices. On the basis of the calculated results of photoresponse, the parabolic conduction-band and Harman's nonparabolic approximations can lead to the response peak shift to short and long wavelengths, respectively.

Paper Details

Date Published: 1 September 2011
PDF: 5 pages
Opt. Eng. 50(9) 094006 doi: 10.1117/1.3627213
Published in: Optical Engineering Volume 50, Issue 9
Show Author Affiliations
Jun Wang, Univ. of Science and Technology of China (China)
Xiaoshuang Chen, Shanghai Institute of Technical Physics (China)
Weida Hu, Shanghai Institute of Technical Physics (China)
Lin Wang, Shanghai Institute of Technical Physics (China)
Yongguo Chen, Shanghai Institute of Technical Physics (China)
Wei Lu, Shanghai Institute of Technical Physics (China)
Faqiang Xu, Univ. of Science and Technology of China (China)


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