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Optical Engineering

Etching of a polyethersulfone film using a XeCl laser
Author(s): Hedieh Pazokian; Mahmoud Mollabashi; Saeid Jelvani; Shahryar Abolhoseini; Jalal Barzin
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Paper Abstract

In this paper laser ablation of a polyethersulfone (PES) film using a XeCl laser was investigated. It was found that the dominant mechanism in the laser ablation of PES is photothermal. An effective absorption coefficient of 6.5 × 104 cm−1 was obtained from fitting the Arrhenius curve with experimental data.

Paper Details

Date Published: 1 August 2011
PDF: 8 pages
Opt. Eng. 50(8) 084301 doi: 10.1117/1.3609008
Published in: Optical Engineering Volume 50, Issue 8
Show Author Affiliations
Hedieh Pazokian, Iran Univ. of Science and Technology (Iran, Islamic Republic of)
Mahmoud Mollabashi, Iran Univ. of Science and Technology (Iran, Islamic Republic of)
Saeid Jelvani, Nuclear Science and Technology Research Institute (Iran, Islamic Republic of)
Shahryar Abolhoseini, Nuclear Science and Technology Research Institute (Iran, Islamic Republic of)
Jalal Barzin, Iran Polymer and Petrochemical Institute (Iran, Islamic Republic of)


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