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Journal of Nanophotonics

Directional and magnetic field enhanced emission of Cu-doped ZnO nanowires/p-GaN heterojunction light-emitting diodes
Author(s): Bruno Viana; Oleg Lupan; Thierry Pauporté
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Paper Abstract

The electrochemical deposition technique was used for the preparation of Cu-doped ZnO-nanowire-based emitters. Nanowires of high structural and optical quality were epitaxially grown on p-GaN single crystalline film substrates. We found that the emission is directional with a wavelength that is tuned and redshifted toward the visible region by doping with Cu in nanowires. Furthermore, Cu-doped ZnO-nanowires show an enhancement of the transition probability under magnetic field.

Paper Details

Date Published: 1 January 2011
PDF: 9 pages
J. Nanophoton. 5(1) 051816 doi: 10.1117/1.3604783
Published in: Journal of Nanophotonics Volume 5, Issue 1
Show Author Affiliations
Bruno Viana, Ecole Nationale Supérieure de Chimie de Paris (France)
Oleg Lupan, Ecole Nationale Supérieure de Chimie de Paris (France)
Thierry Pauporté, Ecole Nationale Supérieure de Chimie de Paris (France)

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