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Journal of Nanophotonics

Combined atomic force microscopy-Raman mapping of electric field enhancement and surface-enhanced Raman scattering hot-spots for nanosphere lithography substrates
Author(s): Claire S. Sweetenham; Ioan Notingher
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Paper Abstract

Surface-enhanced Raman spectroscopy (SERS) substrates formed by nanosphere lithography were investigated for their spatial distribution and magnitude of electric field enhancement. An integrated atomic force microscopy and Raman micro-spectroscopy system was used to establish, with high accuracy, the correlation between the local SERS mappings and substrate topography. Using a monolayer of rhodamine 6G as a probe of the local electric field, the high resolution Raman mappings, showed that the highest electric field enhancement originates from the metallic nanostructures rather than the gaps between them. The enhancement factor of the substrates is calculated from Raman spectra of the substrates covered in a monolayer of p-aminothiophenol and spatial measurements, giving a value on the order of 105. The experimental results were confirmed by theoretical calculations using the finite element method.

Paper Details

Date Published: 1 January 2011
PDF: 7 pages
J. Nanophoton. 5(1) 059504 doi: 10.1117/1.3595345
Published in: Journal of Nanophotonics Volume 5, Issue 1
Show Author Affiliations
Claire S. Sweetenham, The Univ. of Nottingham (United Kingdom)
Ioan Notingher, The Univ. of Nottingham (United Kingdom)


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