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Journal of Micro/Nanolithography, MEMS, and MOEMS

Light-shield border impact on the printability of extreme-ultraviolet mask
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Paper Abstract

When a thinner absorber mask is applied to extreme ultraviolet (EUV) lithography for chip production, it becomes essential to a introduce light-shield border in order to suppress the leakage of EUV light from the adjacent exposure shots. In this paper, we evaluate the leakage of both EUV and out-of-band from light-shield border and clarify the dependence of lithographic performance on light-shield border structure using a small field exposure tool with/without spectral purify filter (SPF). Then we evaluate the lithographic performance of a thin absorber EUV mask with light-shield border of the etched multilayer type and demonstrate the merit of its structure using a full-field scanner operating under the currently employed condition of EUV source in which SPF is not installed.

Paper Details

Date Published: 1 April 2011
PDF: 10 pages
J. Micro/Nanolith. 10(2) 023001 doi: 10.1117/1.3574117
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 10, Issue 2
Show Author Affiliations
Takashi Kamo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kazuo Tawarayama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yuusuke Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yukiyasu Arisawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hajime Aoyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihiko Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, Semiconductor Leading Edge Technologies, Inc. (Japan)


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