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Journal of Micro/Nanolithography, MEMS, and MOEMS

Critical dimension-scanning electron microscope magnification calibration with 25-nm pitch grating reference
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Paper Abstract

We present a novel multilayer grating pattern with a sub-50-nm pitch for critical dimension-scanning electron microscope (CD-SEM) magnification calibration as an advanced version of the conventional 100-nm pitch grating reference. A 25-nm pitch grating reference is fabricated by multilayer deposition of alternating materials and then material-selective chemical etching of the polished cross-sectional surface. A line and space pattern with 25-nm pitch is easily resolved, and a high-contrast secondary electron image of the grating pattern is obtained under 1-kV acceleration voltage using the CD-SEM. The uniformity of the 25-nm pitch of the grating is <1 nm in three standard deviations of the mean. The line-edge roughness of the grating pattern is also <0.5 nm. Such a fine and uniform grating pattern will fulfill the requirements of a magnification calibration reference for a next-generation CD-SEM.

Paper Details

Date Published: 1 January 2011
PDF: 5 pages
J. Micro/Nanolith. 10(1) 013021 doi: 10.1117/1.3565466
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 10, Issue 1
Show Author Affiliations
Yoshinori Nakayama, Hitachi, Ltd. (Japan)
Jiro Yamamoto, Hitachi, Ltd. (Japan)
Hiroki Kawada, Hitachi High-Technologies Corp. (Japan)


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