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Journal of Micro/Nanolithography, MEMS, and MOEMS • Open Access

Fabrication of polynomial 3-D nanostructures in Si with a single-step process
Author(s): Dong Liu; Shakib Morshed; Bo Zhou; Barton C. Prorok; Soo-Young Lee

Paper Abstract

This work demonstrated the ability to transfer a nanoscale 3-D polynomial structure of arbitrary shape into Si with a single step electron-beam lithography process. The technique involved employing a proximity correction algorithm, PYRAMID, to derive the dose distribution for a given 3-D structure by accounting for the electron scattering effects of the surrounding pixels. The pattern was written into a polymethyl methacrylate (PMMA) resist and then successively transferred into Si via reactive ion etching, where a 1:1 etching ratio between PMMA and Si was achieved. The pattern transferred into Si possessed nanoscale features and matched the desired pattern with high fidelity.

Paper Details

Date Published: 1 January 2011
PDF: 3 pages
J. Micro/Nanolith. MEMS MOEMS 10(1) 010501 doi: 10.1117/1.3563601
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 10, Issue 1
Show Author Affiliations
Dong Liu, Auburn Univ. (United States)
Shakib Morshed, Auburn Univ. (United States)
Bo Zhou, Auburn Univ. (United States)
Barton C. Prorok, Auburn Univ. (United States)
Soo-Young Lee, Auburn Univ. (United States)

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