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Optical Engineering

Bent channel design in buried Er3+/Yb3+ codoped phosphate glass waveguide fabricated by field-assisted annealing
Author(s): Ruitu Zhao; Mu Wang; Baojie Chen; Ke Liu; Edwin Yue-Bun Pun; Hai Lin
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Paper Abstract

Bent waveguide structures (S-, U-, and F-bend) based on buried Er3+/Yb3+ codoped phosphate glass waveguide channel fabricated by field-assisted annealing have been designed to achieve high-gain C-band integrated amplification. Using a simulated-bend method, the optimal radius for the curved structure is derived to be 0.90 cm with loss coefficient of 0.02 dB/cm, as the substrate size is schemed to be 4×3 cm2. In the wavelength range of 1520 to 1575 nm, obvious gain enhancement for the bent structure waveguides is anticipated, and for the F-bend waveguide, the internal gain at 1534-nm wavelength is derived to be 41.61 dB, which is much higher than the value of 26.22 and 13.81 dB in the U- and S-bend waveguides, respectively, and over three times higher than that of the straight one. The simulation results indicate that the bent structure design is beneficial in obtaining high signal gain in buried Er3+/Yb3+ codoped phosphate glass waveguides, which lays the foundation for further design and fabrication of integrated devices.

Paper Details

Date Published: 1 April 2011
PDF: 9 pages
Opt. Eng. 50(4) 044602 doi: 10.1117/1.3562983
Published in: Optical Engineering Volume 50, Issue 4
Show Author Affiliations
Ruitu Zhao, Dalian Polytechnic Univ. (China)
Mu Wang, Dalian Polytechnic Univ. (China)
Baojie Chen, Dalian Polytechnic Univ. (China)
Ke Liu, The Univ. of Texas at Dallas (United States)
Edwin Yue-Bun Pun, City Univ. of Hong Kong (Hong Kong, China)
Hai Lin, Dalian Polytechnic Univ. (China)


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