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Journal of Nanophotonics • Open Access

Structural optimization of quantum wells used in a 1-μm vertical-external-cavity surface-emitting laser
Author(s): Peng Zhang; Yanrong Song; Teli Dai; Yiping Liang

Paper Abstract

On the basis of the analysis of material gain, a comprehensive optimization of quantum wells used in a 1-μm vertical-external-cavity surface-emitting laser was carried out. For a single-well structure, the optimized width lies between 8 and 10 nm, the optimized depth is a quantum well with ∼0.1 Al composition in AlGaAs barrier, and the optimized configurations are graded-index quantum well and quantum well with AlGaAs barrier and a GaAs buffer layer. The optimal width of a double- or triple-well structure lies between 6 and 8 nm. Compared to its single- and triple-well counterparts, double-well structure provides higher gain and has more tolerance to the deviation of laser wavelength.

Paper Details

Date Published: 1 January 2011
PDF: 7 pages
J. Nanophoton. 5(1) 059502 doi: 10.1117/1.3562569
Published in: Journal of Nanophotonics Volume 5, Issue 1
Show Author Affiliations
Peng Zhang, Chongqing Normal Univ. (China)
Yanrong Song, Beijing Univ. of Technology (Australia)
Teli Dai, Chongqing Normal Univ. (China)
Yiping Liang, Chongqing Normal Univ. (China)


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