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Optical Engineering

Silicon optical modulator with integrated grating couplers based on 0.18-μm complementary metal oxide semiconductor technology
Author(s): Haihua Xu; Zhiyong Li; Yu Zhu; Yuntao Li; Yude Yu; Jinzhong Yu
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Paper Abstract

A silicon p-i-n diode Mach-Zehnder optical modulator integrated with grating couplers is fabricated in 0.18-μm complementary metal oxide semiconductor technology. The device has an ultracompact length of 200 μm. High modulation efficiency with a figure of merit of VπL = 0.22 V mm is demonstrated. A novel pre-emphasis technique is introduced to achieve high-speed modulation, and a data transmission rate of 3 Gbps is present.

Paper Details

Date Published: 1 April 2011
PDF: 6 pages
Opt. Eng. 50(4) 044001 doi: 10.1117/1.3560264
Published in: Optical Engineering Volume 50, Issue 4
Show Author Affiliations
Haihua Xu, Institute of Semiconductors (China)
Zhiyong Li, Institute of Semiconductors (China)
Yu Zhu, Institute of Semiconductors (China)
Yuntao Li, Institute of Semiconductors (China)
Yude Yu, Institute of Semiconductors (China)
Jinzhong Yu, Institute of Semiconductors (China)

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