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Journal of Photonics for Energy • Open Access

Schottky diode based on polyaniline-poly (methyl methacrylate) system
Author(s): Tharwat G. Abdel-Malik; Hussen A. Motaweh; Mohamed O. Abdel-Hamed

Paper Abstract

Polyaniline-(PANI)-poly (methyl methacrylate) (PMMA) blend was used to fabricate the Schottky device: Al/ PANI-PMMA /Au. Current density-voltage (J-V) capacitance-voltage (C-V), and complex impedance measurements were used to evaluate the junction parameters of the devices. The photovoltaic parameters of the cells are estimated from the analysis of the current-voltage characteristics under illumination.

Paper Details

Date Published: 1 January 2011
PDF: 8 pages
J. Photon. Energy 1(1) 011116 doi: 10.1117/1.3560242
Published in: Journal of Photonics for Energy Volume 1, Issue 1
Show Author Affiliations
Tharwat G. Abdel-Malik, Minia Univ. (Egypt)
Hussen A. Motaweh, Alexandria Univ. (Egypt)
Mohamed O. Abdel-Hamed, Minia Univ. (Egypt)

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