Share Email Print

Journal of Micro/Nanolithography, MEMS, and MOEMS

High-resolution microfabricated Vernier-type displacement sensor using suspended gate field-effect transistors
Author(s): Jo-Han Hsu; Max Ti-Kuang Hou; Rongshun Chen
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

In this paper, a high resolution Vernier-type displacement sensing mechanism is proposed by utilizing Vernier-type suspended gate field-effect transistors (SGFETs), The field-effect transistor benefits from its linear output signal and simple structure, and the concept of Vernier gate is used to enhance the resolution. The displacement of the comb-drive actuator is sensed via the output drain current of SGFET. Design and analysis for Vernier-type suspended gate were presented and some characteristics of the Vernier-type SGFETs were also discussed in simulation results.

Paper Details

Date Published: 1 January 2011
PDF: 5 pages
J. Micro/Nanolith. MEMS MOEMS 10(1) 011502 doi: 10.1117/1.3533325
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 10, Issue 1
Show Author Affiliations
Jo-Han Hsu, National Tsing Hua Univ. (Taiwan)
Max Ti-Kuang Hou, National United Univ. (Taiwan)
Rongshun Chen, National Tsing Hua Univ. (Taiwan)

© SPIE. Terms of Use
Back to Top