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Optical Engineering

Nonlinear switching in silicon-based ring resonators
Author(s): Channarong Kusalajeerung; Surasak Chiangga; Santad Pitukwongsaporn; Preecha P. Yupapin
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Paper Abstract

In this paper, we analyzed and investigated the nonlinear switching characteristics of an optical device using a double-coupler silicon ring resonator in the presence of the linear losses, the Kerr nonlinearity, two-photon absorption, thermo-optic effects, free-carrier-induced absorption, and dispersion. Results obtained have shown that the general features of the nonlinear switching of the throughput and drop port signals are similar to a single-couple ring and nonlinear Fabry-Perot resonators, respectively. The interesting results of the double-coupler silicon ring resonator are the low switching power conditions and the linear amplification gain. The various applications can be provided by controlling the input-output of silicon-based resonators, for instance, by controlling the coupling ratio, free-carrier lifetime, and input wavelength, in which the multiple applications for optical switches, logic gates, and memories can be provided.

Paper Details

Date Published: 1 February 2011
PDF: 6 pages
Opt. Eng. 50(2) 024601 doi: 10.1117/1.3533033
Published in: Optical Engineering Volume 50, Issue 2
Show Author Affiliations
Channarong Kusalajeerung, Kasetsart Univ. (Thailand)
Surasak Chiangga, Kasetsart Univ. (Thailand)
Santad Pitukwongsaporn, Kasetsart Univ. (Thailand)
Preecha P. Yupapin, King Mongkut's Institute of Technology Ladkrabang (Thailand)

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