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Journal of Micro/Nanolithography, MEMS, and MOEMS

Scatterometry characterization of spacer double patterning structures
Author(s): Prasad Dasari; Jiangtao Hu; Zhuan Liu; Asher Tan; Oleg Kritsun; Catherine Volkman; Christopher Bencher
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Paper Abstract

Double patterning technology overlay errors result in critical dimension (CD) distortions, and CD nonuniformity leads to overlay errors, demanding increased critical dimension uniformity (CDU) and improved overlay control. Scatterometry techniques are used to characterize the CD uniformity, focus, and dose control. We present CDU and profile characterization for spacer double patterning structures by advanced scatterometry methods. Our results include normal incidence spectroscopic reflectometry (NISR) and spectroscopic ellipsometry (SE) characterization of CDU sensitivity in spacer double patterning stacks. We further show the results of spacer DP structures by NISR and SE measurements. Metrology comparisons at various process steps including litho, etch, and spacer, and validation of CDU and profile, are all benchmarked against traditional critical dimension scanning electron microscope measurements.

Paper Details

Date Published: 1 October 2010
PDF: 9 pages
J. Micro/Nanolith. MEMS MOEMS 9(4) 041309 doi: 10.1117/1.3531999
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 9, Issue 4
Show Author Affiliations
Prasad Dasari, Nanometrics Inc. (United States)
Jiangtao Hu, Nanometrics Inc. (United States)
Zhuan Liu, Nanometrics Inc. (United States)
Asher Tan, Nanometrics Inc. (United States)
Oleg Kritsun, GLOBALFOUNDRIES Inc. (United States)
Catherine Volkman, GLOBALFOUNDRIES Inc. (United States)
Christopher Bencher, Applied Materials, Inc. (United States)

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