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Journal of Micro/Nanolithography, MEMS, and MOEMS

Predicting substrate-induced focus error
Author(s): Bernhard R. Liegl; Brian Sapp; Stephen Greco; Timothy A. Brunner; Nelson Felix; Ian Stobert; Kourosh Nafisi; Chandra Sarma
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Paper Abstract

The ever-shrinking lithography process window dictates that we maximize our process window, minimize process variation, and quantify the disturbances to an imaging process caused upstream of the imaging step. Relevant factors include across-wafer and wafer-to-wafer film thickness variation, wafer flatness, wafer edge effects, and design-induced topography. We present our effort to predict design-induced focus error hot spots based on prior knowledge of the wafer surface topography. This knowledge of wafer areas challenging the edge of our process window enables a constructive discussion with our design and integration team to prevent or mitigate focus error hot spots upstream of the imaging process.

Paper Details

Date Published: 1 October 2010
PDF: 9 pages
J. Micro/Nanolith. 9(4) 041311 doi: 10.1117/1.3530580
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 9, Issue 4
Show Author Affiliations
Bernhard R. Liegl, IBM Corp. (United States)
Brian Sapp, IBM Corp. (United States)
Stephen Greco, IBM Corp. (United States)
Timothy A. Brunner, IBM Corp. (United States)
Nelson Felix, IBM Corp. (United States)
Ian Stobert, IBM Corp. (United States)
Kourosh Nafisi, IBM Corp. (United States)
Chandra Sarma, Infineon Technologies North America Corp. (United States)


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