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Journal of Micro/Nanolithography, MEMS, and MOEMS

Stochastic simulation of resist linewidth roughness and critical dimension uniformity for optical lithography
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Paper Abstract

The physical processes that underpin a recently developed commercial stochastic resist model are introduced and the model details discussed. The model is calibrated to experimental data for a commercially available immersion chemically amplified photoresist using basic physical information about the resist and an iterative fitting procedure. This data comprises CD (critical dimension) and LWR (linewidth roughness) measurements through focus and exposure for three separate line-type features on varying pitches: dense, semidense, and isolated. A root mean square error (RMSE) of 2.0 nm is observed between the calibrated model and the experimental CD data. The ability of the calibrated model to predict experimentally observed CD uniformity distributions is tested for a variety of 1-D and 2-D patterns under fixed focus and exposure conditions. The subnanometer RMSE obtained between experiment and simulation suggests that the calibrated stochastic model has excellent predictive power for a variety of applications.

Paper Details

Date Published: 1 October 2010
PDF: 7 pages
J. Micro/Nanolith. MEMS MOEMS 9(4) 041212 doi: 10.1117/1.3517090
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 9, Issue 4
Show Author Affiliations
Stewart A. Robertson, KLA-Tencor Texas (United States)
John J. Biafore, KLA-Tencor Arizona (United States)
Mark D. Smith, KLA-Tencor Arizona (United States)
Michael Reilly, Dow Electronic Materials (United States)
Jerome Wandell, Dow Electronic Materials (United States)

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