Share Email Print
cover

Journal of Micro/Nanolithography, MEMS, and MOEMS

Impact of extreme ultraviolet mask absorber defect with pattern roughness on lithographic images
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

The impact of an EUV mask absorber defect with pattern roughness on lithographic images was studied. In order to reduce systematic line width roughness (LWR) of wafer printed patterns, the mask making process was improved; and in order to reduce random LWR, low line-edge roughness resist material and a critical dimension averaging method of multiple-exposure shots were introduced. Then, by using a small field exposure tool, a mask-induced systematic printed LWR was quantified and estimated at 32-nm half-pitch and 28-nm half-pitch. The measurement results of the critical mask absorber defect size were compared with the simulation, and the results were then discussed.

Paper Details

Date Published: 1 October 2010
PDF: 9 pages
J. Micro/Nanolith. 9(4) 041204 doi: 10.1117/1.3494618
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 9, Issue 4
Show Author Affiliations
Takashi Kamo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hajime Aoyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yukiyasu Arisawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Mihoko Kijima, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihiko Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, Semiconductor Leading Edge Technologies, Inc. (Japan)


© SPIE. Terms of Use
Back to Top