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Journal of Micro/Nanolithography, MEMS, and MOEMS

Roughness characterization in the frequency domain and linewidth roughness mitigation with post-lithography processes
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Paper Abstract

A previously developed linewidth roughness analysis technique is used to characterize post-lithography process roughness reduction in the frequency domain. Post-lithography processes are likely to be required to reach the International Technology Roadmap for Semiconductors roughness specifications for the 32-nm and 22-nm technological nodes. The aim of these processes is to reduce 3 linewidth roughness after etch without dramatic changes in critical dimensions. Various techniques are discussed: in-track chemical processes, ion-beam sputtering, and thermal and plasma treatments-each technique manifests a characteristic smoothing, reducing roughness up to 34%. Exploiting roughness mitigation at different frequencies, our target is to determine whether 50% 3 linewidth roughness reduction after etch is feasible.

Paper Details

Date Published: 1 October 2010
PDF: 7 pages
J. Micro/Nanolith. MEMS MOEMS 9(4) 041203 doi: 10.1117/1.3494614
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 9, Issue 4
Show Author Affiliations
Alessandro Vaglio-Pret, IMEC (Belgium)
Roel Gronheid, IMEC (Belgium)
Philippe Foubert, IMEC (Belgium)

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