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Optical Engineering

Formation of a broad photoluminescence band from Si+-implanted SiO2 films by varying the heating rate of rapid thermal annealing
Author(s): Ming-Yue Fu; Jen-Hwan Tsai; Cheng-Fu Yang
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Paper Abstract

Varying the heating rate of rapid thermal annealing (RTA) reveals a broadband shift of room-temperature photoluminescence (PL) in 3×1016 cm−2 Si+-implanted 400-nm-thick SiO2 films after RTA at 1150°C in dry nitrogen. At a heating rate of 100°C/s, the PL peaks shift from 2.6 eV to 1.7 eV for isothermal RTA durations from 1 to 20 s. Additionally, decreasing the heating rate to 25°C/s does not significantly shift the PL peak in the films after the isothermal RTA for durations ≥1 s. The attractive features of RTA provide a valuable reference for manufacturing of optoelectronic devices.

Paper Details

Date Published: 1 July 2010
PDF: 4 pages
Opt. Eng. 49(7) 073801 doi: 10.1117/1.3461964
Published in: Optical Engineering Volume 49, Issue 7
Show Author Affiliations
Ming-Yue Fu, R.O.C. Air Force Academy (Taiwan)
Jen-Hwan Tsai, R.O.C. Air Force Academy (Taiwan)
Cheng-Fu Yang, National Univ. of Kaohsiung (Taiwan)


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