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Optical Engineering

Reduction of residual stress in optical silicon nitcide thin films prepared by radio-frequency ion beam sputtering deposition
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Paper Abstract

In this study, we investigate the deposition of SiNx thin films by radio-frequency ion-beam sputtering deposition. By varying the amount of N2 and Ar flow and ion-beam voltage, we can obtain an optimal refractive index of 2.07, extinction coefficient (at the central wavelength of 500 nm) of 3.44×10−4, and deposition rate of 0.166 nm/s. The x-ray photoelectron spectra of SiNx films deposited with different beam voltages are also analyzed. The residual stress of the SiNx films varied from −1.38 to −2.17 GPa, depending on the beam voltage. The residual stress is reduced from −2.17 to −1.40 GPa when the film is divided into four layers with three interfaces.

Paper Details

Date Published: 1 June 2010
PDF: 7 pages
Opt. Eng. 49(6) 063802 doi: 10.1117/1.3456708
Published in: Optical Engineering Volume 49, Issue 6
Show Author Affiliations
Cheng-Chung Lee, National Central Univ. (Taiwan)
Kun-Hsien Lee, National Central Univ. (Taiwan)
Chien-Jen Tang, Minghsin Univ. of Science and Technology (Taiwan)
Cheng-Chung Jaing, Minghsin Univ. of Science and Technology (Taiwan)
Hsi-Chao Chen, National Yunlin Univ. of Science and Technology (Taiwan)

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