Share Email Print

Optical Engineering

Reduction of residual stress in optical silicon nitcide thin films prepared by radio-frequency ion beam sputtering deposition
Format Member Price Non-Member Price
PDF $20.00 $25.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this study, we investigate the deposition of SiNx thin films by radio-frequency ion-beam sputtering deposition. By varying the amount of N2 and Ar flow and ion-beam voltage, we can obtain an optimal refractive index of 2.07, extinction coefficient (at the central wavelength of 500 nm) of 3.44×10−4, and deposition rate of 0.166 nm/s. The x-ray photoelectron spectra of SiNx films deposited with different beam voltages are also analyzed. The residual stress of the SiNx films varied from −1.38 to −2.17 GPa, depending on the beam voltage. The residual stress is reduced from −2.17 to −1.40 GPa when the film is divided into four layers with three interfaces.

Paper Details

Date Published: 1 June 2010
PDF: 7 pages
Opt. Eng. 49(6) 063802 doi: 10.1117/1.3456708
Published in: Optical Engineering Volume 49, Issue 6
Show Author Affiliations
Cheng-Chung Lee, National Central Univ. (Taiwan)
Kun-Hsien Lee, National Central Univ. (Taiwan)
Chien-Jen Tang, Minghsin Univ. of Science and Technology (Taiwan)
Cheng-Chung Jaing, Minghsin Univ. of Science and Technology (Taiwan)
Hsi-Chao Chen, National Yunlin Univ. of Science and Technology (Taiwan)

© SPIE. Terms of Use
Back to Top