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Journal of Micro/Nanolithography, MEMS, and MOEMS

Design for manufacture to deal with mask-induced critical dimension errors in the extreme ultraviolet
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Paper Abstract

The actual extreme ultraviolet lithography tools will have aberrations around seven times larger than those of the latest ArF lithography tools in wavelength normalized rms. We calculated the influence of aberrations on the size error and pattern shift error using Zernike sensitivity analysis. Mask-induced aberration restricts the specification of aberration. Without periodic additional pattern, the aberration level that can be accepted to form 22 nm dual-gate patterns was <8 mλ rms. Arranging the periodic additional pattern relaxed the aberration tolerance. With periodic additional pattern, the acceptable aberration level to form 22 nm patterns was below <37 mλ rms. It is important to make pattern periodicity for the relaxation of the aberration specification.

Paper Details

Date Published: 1 April 2010
PDF: 8 pages
J. Micro/Nanolith. MEMS MOEMS 9(2) 023009 doi: 10.1117/1.3421948
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 9, Issue 2
Show Author Affiliations
Yumi Nakajima, Toshiba Materials Co., Ltd. (Japan)
Takashi Sato, Toshiba Corp. (Japan)
Ryoichi Inanami, Toshiba Materials Co., Ltd. (Japan)
Tetsuro Nakasugi, Toshiba Materials Co., Ltd. (Japan)
Tatsuhiko Higashiki, Toshiba Corp. (Japan)

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