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Journal of Micro/Nanolithography, MEMS, and MOEMS

Thin-absorber extreme-ultraviolet lithography mask with light-shield border for full-field scanner: flatness and image placement change through mask process
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Paper Abstract

When a thinner absorber mask is practically applied to the extreme ultraviolet lithography for ultra large scale integration chip production, it is inevitable to introduce an extreme ultraviolet (EUV) light shield area to suppress leakage of the EUV light from adjacent exposure shots. We believe that a light-shield border of the multilayer etching type is a promising structure in terms of mask process flexibility for higher mask critical dimension accuracy. We evaluate the etching impact of the absorber and multilayer on the mask flatness and image placement change through the mask process of a thin absorber mask with a light-shield border of the multilayer etching type structure. We clarify the relation between mask flatness and mask image placement shift.

Paper Details

Date Published: 1 April 2010
PDF: 10 pages
J. Micro/Nanolith. 9(2) 023005 doi: 10.1117/1.3378154
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 9, Issue 2
Show Author Affiliations
Takashi Kamo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yuusuke Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihiko Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Iwao Nishiyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsukasa Abe, Dai Nippon Printing Co., Ltd. (Japan)
Tadahiko Takikawa, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Tsutomu Shoki, HOYA Corp. (Japan)
Youichi Usui, HOYA Corp. (Japan)


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