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Journal of Micro/Nanolithography, MEMS, and MOEMS

Ion implantation as insoluble treatment for resist-stacking process
Author(s): Hiroko Nakamura; Takeshi Shibata; Katsumi Rikimaru; Sanae Ito; Satoshi Tanaka; Soichi Inoue
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Paper Abstract

With regard to the resist-stacking process, it was proposed that the implantation of ions whose acceleration voltage was below 50 kV could make the lower-layer resist insoluble for the upper-layer resist-patterning process. However, the lower-layer resist pattern is observed to be removed after the upper-layer resist patterning in a pattern. In another type of a pattern, there are caves in the bottom of the lower-layer resist pattern after the upper-layer resist patterning. From the calculation of the projected range of the ions, it is found that the ions cannot reach the bottom of the lower-layer resist pattern, and therefore the bottom of the lower-layer resist is not hardened. The removal is due to the dissolution of the bottom in the lower-layer resist during the development of the upper-layer resist pattern. When the acceleration voltage of the implanted ions is set so that the projected range of the ions is larger than the resist thickness, the lower-layer resist can be made effectively insoluble for the upper-layer resist-patterning process. The ion-implanted pattern can be used as the etching mask. Moreover, the ions can be prevented from penetrating the film to be etched by adjusting the thicknesses of stacked antireflective coating.

Paper Details

Date Published: 1 January 2010
PDF: 8 pages
J. Micro/Nanolith. 9(1) 013020 doi: 10.1117/1.3302123
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 9, Issue 1
Show Author Affiliations
Hiroko Nakamura
Takeshi Shibata, Toshiba Materials Co., Ltd. (Japan)
Katsumi Rikimaru, Toshiba Materials Co., Ltd. (Japan)
Sanae Ito, Toshiba Materials Co., Ltd. (Japan)
Satoshi Tanaka, Toshiba Materials Co., Ltd. (Japan)
Soichi Inoue, Toshiba Materials Co., Ltd. (Japan)


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