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Journal of Micro/Nanolithography, MEMS, and MOEMS

Fully differential CMOS-MEMS z-axis accelerometer with torsional structures and planar comb fingers
Author(s): Mohd Haris; Hongwei Qu
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Paper Abstract

Fully differential z-axis acceleration sensing often requires complicated multiwafer bonding processes. We present an integrated fully differential complementary metal-oxide semiconductor-microelectromechanical systems (CMOS-MEMS) z-axis accelerometer utilizing planar comb fingers and a pair of single-crystal silicon (SCS) torsional springs. The sidewall capacitors formed by multiple CMOS interconnect metal layers are exploited for fully differential displacement sensing with a common-centroid wiring configuration. Single crystal silicon is used throughout the device to form robust microstructures. A deep reactive ion etching (DRIE)-based microfabrication process with large processing tolerance has been developed to allow monolithic integration of CMOS circuitry with sensor structures and high fabrication yield. With an on-chip low-power, low-noise, dual-chopper amplifier that has a measured 44.5-dB gain and 1-mW power consumption, the fabricated integrated z-axis accelerometer demonstrates a sensitivity of 250 mV/g and an overall noise floor of 110 µg/√Hz.

Paper Details

Date Published: 1 January 2010
PDF: 7 pages
J. Micro/Nanolith. 9(1) 013031 doi: 10.1117/1.3295714
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 9, Issue 1
Show Author Affiliations
Mohd Haris, Oakland Univ. (United States)
Hongwei Qu, Oakland Univ. (United States)

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