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Journal of Micro/Nanolithography, MEMS, and MOEMS

Recent progress in developing an extreme ultraviolet full-field exposure tool at Selete
Author(s): Kazuo Tawarayama; Hajime Aoyama; Shunko Magoshi; Yuusuke Tanaka; Seiichiro Shirai; Hiroyuki Tanaka
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Paper Abstract

The Selete full-field EUV exposure tool, EUV1, manufactured by Nikon, is being set up at Selete. Its lithographic performance was evaluated in exposure experiments with a static slit using line-and-space (L&S) patterns, Selete Standard Resist 03 (SSR3), a numerical aperture of 0.25, and conventional illumination (σ=0.8). The results show that 25-nm L&S patterns were resolved. Dynamic exposure experiments demonstrate that the resolution is 45 nm across the exposure field. The CD uniformity across a shot is 3 nm. Evaluation of the overlay performance of the EUV1 using alignment marks on a processed wafer revealed the repeatability to be better than 1 nm. The overlay accuracy obtained with enhanced global alignment was less than 4 nm (3σ) after linear correction. These results show that the EUV1 has attained the quality level of a typical alpha-level lithography tool and is suitable for test site verification.

Paper Details

Date Published: 1 October 2009
PDF: 5 pages
J. Micro/Nanolith. 8(4) 041510 doi: 10.1117/1.3275786
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 8, Issue 4
Show Author Affiliations
Kazuo Tawarayama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hajime Aoyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Shunko Magoshi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yuusuke Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Seiichiro Shirai, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroyuki Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)


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