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Journal of Nanophotonics

Selective growth of InAs quantum dots on SiO2-masked GaAs
Author(s): Fabrizio Arciprete; Ernesto Placidi; Fulvia Patella; Massimo Fanfoni; Adalberto Balzarotti; Anna Vinattieri; L. Cavigli; M. Abbarchi; Massimo Gurioli; Lamberto Lunghi; Annamaria Gerardino
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Paper Abstract

We investigated on the growth, by molecular beam epitaxy, of InAs quantum dots on nanoscale areas of the GaAs(001) surface defined by an e-beam lithographed SiO2 mask. The selective self-assembling of the InAs dots inside the holes of the mask was obtained by a suitable choice of the growth parameters and of the pattern size. Photoluminescence from the spatially confined dots showed a blue-shifted emission but a radiative decay comparable to that of dots nucleated on the extended GaAs surface.

Paper Details

Date Published: 1 October 2009
PDF: 8 pages
J. Nanophoton. 3(1) 031995 doi: 10.1117/1.3266494
Published in: Journal of Nanophotonics Volume 3, Issue 1
Show Author Affiliations
Fabrizio Arciprete, Univ. degli Studi di Roma Tor Vergata (Italy)
Ernesto Placidi, Univ. degli Studi di Roma Tor Vergata (Italy)
Fulvia Patella, Univ. degli Studi di Roma Tor Vergata (Italy)
Massimo Fanfoni, Univ. degli Studi di Roma Tor Vergata (Italy)
Adalberto Balzarotti, Univ. degli Studi di Roma Tor Vergata (Italy)
Anna Vinattieri, Univ. degli Studi di Firenze (Italy)
L. Cavigli, Univ. degli Studi di Firenze (Italy)
M. Abbarchi, Univ. degli Studi di Firenze (Italy)
Massimo Gurioli, Univ. degli Studi di Firenze (Italy)
Lamberto Lunghi, Consiglio Nazionale delle Ricerche (Italy)
Annamaria Gerardino, Consiglio Nazionale delle Ricerche (Italy)


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