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Journal of Micro/Nanolithography, MEMS, and MOEMS

Imaging budgets for extreme ultraviolet optics: ready for 22-nm node and beyond
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Paper Abstract

We derive an imaging budget from the performance of extreme ultraviolet (EUV) optics with NA = 0.32, and demonstrate that the requirements for 22-nm applications are met. Based on aerial image simulations, we analyze the impact of all relevant contributors, ranging from conventional quantities like straylight or aberrations, to EUV-specific topics, namely the influence of 3-D mask effects and faceted illumination pupils. As test structures we consider dense to isolated lines, contact holes, and 2-D elbows. We classify the contributions in a hierarchical order according to their weight in the critical dimension uniformity (CDU) budget and identify the main drivers. The underlying physical mechanisms causing different contributions to be critical or less significant are clarified. Finally, we give an outlook for the 16- and 11-nm nodes. Future developments in optics manufacturing will keep the budgets controlled, thereby paving the way to enable printing of these upcoming nodes.

Paper Details

Date Published: 1 October 2009
PDF: 11 pages
J. Micro/Nanolith. 8(4) 041509 doi: 10.1117/1.3238543
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 8, Issue 4
Show Author Affiliations
Marc Bienert, Carl Zeiss SMT AG (Germany)
Aksel Göhnermeier, Carl Zeiss SMT AG (Germany)
Oliver Natt, Carl Zeiss SMT AG (Germany)
Martin Lowisch, Carl Zeiss SMT AG (Germany)
Paul Gräupner, Carl Zeiss SMT AG (Germany)
Tilmann Heil, Carl Zeiss SMT AG (Germany)
Reiner B. Garreis, Carl Zeiss SMT AG (Germany)
Koen van Ingen Schenau, ASML Netherlands B.V. (Netherlands)
Steven G. Hansen, ASML US, Inc. (United States)

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