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Journal of Micro/Nanolithography, MEMS, and MOEMS

Development progress of optics for extreme ultraviolet lithography at Nikon
Author(s): Katsuhiko Murakami; Tetsuya Oshino; Hiroyuki Kondo; Masayuki Shiraishi; Hiroshi Chiba; Hideki Komatsuda; Kazushi Nomura; Jin Nishikawa
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Paper Abstract

The full-field extreme ultraviolet (EUV) exposure tool named EUV1 is integrated and exposure experiments are started with a numerical aperture of the projection optics of 0.25, and conventional partial coherent illumination with a coherence factor of 0.8. 32-nm elbow patterns are resolved in a full arc field in static exposure. In a central area, 25-nm line-and-space patterns are resolved. In scanning exposure, 32-nm line-and-space patterns are successfully exposed on a full wafer. Wavefront error of the projection optics is improved to 0.4-nm rms. Flare impact on imaging is clarified, dependent on flare evaluation using the Kirk test. Resolution enhancement technology (RET) fly-eye mirrors and reflection-type spectral purity filters (SPFs) are investigated to increase throughput. High-NA projection optics design is also reviewed.

Paper Details

Date Published: 1 October 2009
PDF: 6 pages
J. Micro/Nanolith. 8(4) 041507 doi: 10.1117/1.3238522
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 8, Issue 4
Show Author Affiliations
Katsuhiko Murakami, Nikon Corp. (Japan)
Tetsuya Oshino, Nikon Corp. (Japan)
Hiroyuki Kondo, Nikon Corp. (Japan)
Masayuki Shiraishi, Nikon Corp. (Japan)
Hiroshi Chiba, Nikon Corp. (Japan)
Hideki Komatsuda, Nikon Corp. (Japan)
Kazushi Nomura, Nikon Corp. (Japan)
Jin Nishikawa, Nikon Corp. (Japan)


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