Share Email Print

Journal of Micro/Nanolithography, MEMS, and MOEMS

Hotspot management and its applications in ultralow k1 lithography
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

We have constructed a hotspot management flow and applied the flow to large-scale integration (LSI) manufacturing in the ultralow k1 lithography era. This flow involves three main management steps: hotspot reduction, hotspot extraction, and hotspot monitoring. Hotspot reduction works with lithography-friendly restricted design rule (RDR) and manufacturability check (MC). Hotspot extraction is carried out with a view to realizing short operation time and accurate extraction. Hotspot monitoring is achieved with tolerance-based verification in the mask fabrication process and wafer process (lithography and etching). These technology elements could be integrated into the LSI fabrication flow for reduction of total cost, quick turnaround time (TAT), and ramp-up to volume production. In addition to discussion of the technology elements in hotspot management, we also provide typical applications for important decisions in LSI fabrication: photomask availability for any exposure tools ("exposure tool yokoten") and process condition updates in LSI fabrication.

Paper Details

Date Published: 1 July 2009
PDF: 8 pages
J. Micro/Nanolith. MEMS MOEMS 8(3) 033007 doi: 10.1117/1.3213232
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 8, Issue 3
Show Author Affiliations
Kohji Hashimoto, Toshiba Materials Co., Ltd. (Japan)
Satoshi Usui, Toshiba Materials Co., Ltd. (Japan)
Shigeki Nojima, Toshiba Materials Co., Ltd. (Japan)
Toshiya Kotani, Toshiba Materials Co., Ltd. (Japan)
Eiji Yamanaka, Toshiba Corp. (Japan)
Satoshi Tanaka, Toshiba Materials Co., Ltd. (Japan)
Soichi Inoue, Toshiba Materials Co., Ltd. (Japan)

© SPIE. Terms of Use
Back to Top