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Journal of Micro/Nanolithography, MEMS, and MOEMS

Large-size P-type silicon microchannel plates prepared by photoelectrochemical etching
Author(s): Ding Yuan; Pengliang Ci; Fei Tian; Jing Shi; Shaohui Xu; Peisheng Xin; Lianwei Wang; Paul K. Chu
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Paper Abstract

The influence of backside illumination and temperature on the fabrication of large and high aspect ratio silicon microchannel plates (MCPs) by photoelectrochemical (PEC) process is described. Backside illumination is provided by three 150-W tungsten halogen lamps with a feedback loop, keeping a constant current density. The etching temperature is maintained by a circulation system. Proper backside illumination and the lower temperature can provide better integrated etching conditions compared to that without illumination and temperature control. Etching under the improved conditions results in smoother undercutting and better surface topography for large (effective diameter of about 80 mm for 4-inch silicon substrates) silicon microchannel plates. Enhancing the backside illumination within the etching temperature range ensures that the aspect ratio is more than 40, boding well for applications of silicon microchannel plates.

Paper Details

Date Published: 1 July 2009
PDF: 7 pages
J. Micro/Nanolith. MEMS MOEMS 8(3) 033012 doi: 10.1117/1.3158616
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 8, Issue 3
Show Author Affiliations
Ding Yuan, East China Normal Univ. (China)
Pengliang Ci, East China Normal Univ. (China)
Fei Tian, East China Normal Univ. (China)
Jing Shi, East China Normal Univ. (China)
Shaohui Xu, East China Normal Univ. (China)
Peisheng Xin, East China Normal Univ. (China)
Lianwei Wang, East China Normal Univ. (China)
Paul K. Chu, City Univ. of Hong Kong (Hong Kong, China)

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