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Journal of Micro/Nanolithography, MEMS, and MOEMS

Effect of residual stress on nanoindented property of Si/C/Si multilayers
Author(s): Bo Hsiung Wu; Chen-Kuei Chung; T. R. Shih; Chi-Cheng Peng; U. S. Mohanty
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Paper Abstract

The effect of residual stress on the nanoindentation property of Si/C/Si multilayers has been investigated. Sandwiched Si/C/Si multilayers were deposited on Si(100) substrates by means of ultrahigh-vacuum ion-beam sputtering at room temperature (RT). Four structures with different Si top-layer thickness of 5, 10, 25, and 50 nm and the constant thickness of C/Si underlayer at 100/50 nm were investigated in this study. The residual stress of the Si/C/Si (5/100/50 nm/nm/nm thick) film was about −17.76 GPa under compression, and its hardness was 20.39 GPa at RT. The compressive residual stress was decreased to −5.54 GPa with the increased thickness of Si toplayer up to 50 nm, and its hardness was reduced to ~16.22 GPa at RT. The effect of Si top-layer thickness (5-50 nm) on Si/C/Si residual stress on the nanoindentation property were also discussed. The results showed that the thicker was the Si toplayer, the lower was the residual stress and hardness, which was good for the suppression of the buckling or wrinkling in the C/Si-nanocomposite film.

Paper Details

Date Published: 1 July 2009
PDF: 5 pages
J. Micro/Nanolith. MEMS MOEMS 8(3) 033030 doi: 10.1117/1.3158358
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 8, Issue 3
Show Author Affiliations
Bo Hsiung Wu, National Cheng Kung Univ. (Taiwan)
Chen-Kuei Chung, National Cheng Kung Univ. (Taiwan)
T. R. Shih, National Cheng Kung Univ. (Taiwan)
Chi-Cheng Peng, National Cheng Kung Univ. (Taiwan)
U. S. Mohanty, Murdoch Univ. (Australia)

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