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Journal of Micro/Nanolithography, MEMS, and MOEMS • Open Access

Impact of mask three-dimensional effects on resist-model calibration

Paper Abstract

We report on a comparison between a full-physical resist model that was calibrated to experimental line/space (L/S) critical dimension (CD) data under the flat-mask (also called "thin-mask" or "Kirchhoff") approximation with the model obtained when using a mask 3-D calculation engine (i.e., one that takes into account the mask-topography effects). Both models were tested by evaluating their prediction of the CDs of a large group of 1-D and 2-D structures. We found a clear correlation between the measured-predicted CD difference and the magnitude of the mask 3-D CD effect, and show that the resist model calibrated with a mask 3-D calculation engine clearly offers a better CD predictability for certain types of structures.

Paper Details

Date Published: 1 July 2009
PDF: 3 pages
J. Micro/Nanolith. MEMS MOEMS 8(3) 030501 doi: 10.1117/1.3158356
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 8, Issue 3
Show Author Affiliations
Peter De Bisschop, IMEC (Belgium)
Thomas Muelders, Infineon Technologies Dresden (Germany)
Ulrich K. Klostermann, Synopsys GmbH (Germany)
Thomas Schmoeller, Synopsys GmbH (Germany)
John J. Biafore, KLA-Tencor Texas (United States)
Stewart A. Robertson, KLA-Tencor Texas (United States)
Mark D. Smith, KLA-Tencor Texas (United States)

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