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Journal of Micro/Nanolithography, MEMS, and MOEMS

Extreme ultraviolet interference lithography as applied to photoresist studies
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Paper Abstract

Extreme ultraviolet interference lithography (EUV IL), especially in combination with tool-independent metrics for resist performance, is a powerful technique for judging progress with current resists, the potential of new materials and studying the fundamentals of resist performance. We provide an overview of how EUV IL is applied for resist testing and early material selections. Also discussed are examples of EUV IL being used to gain fundamental understanding for resist characterization under EUV imaging conditions.

Paper Details

Date Published: 1 April 2009
PDF: 10 pages
J. Micro/Nanolith. MEMS MOEMS 8(2) 021205 doi: 10.1117/1.3124188
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 8, Issue 2
Show Author Affiliations
Roel Gronheid, IMEC (Belgium)
Michael J. Leeson, IMEC (Belgium)

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