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Journal of Micro/Nanolithography, MEMS, and MOEMS

Hyper-thin resist system for photomask-making in double-patterning generation
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Paper Abstract

Double-patterning generation at 32-nm node and beyond raises many subjects for photomask blanks. We especially focus on the resolution improvement by hyper-thin resist combined with the hardmask process called the hyper-thin resist system (HTRS). Cr-hardmask has been specially developed for the HTRS, and this Cr material shows an extremely high etching rate. Additionally, we confirmed that a 55-nm resist thickness was available to etch the Cr-hardmask and last then the resolution of MoSi-absorber patterns was improved by HTRS, such as 45-nm LS, 60-nm isolated line and hole, and 35-nm isolated space. Moreover, the Cr-hardmask showed almost no film stress, which is necessary to achieve the image placement accuracy required for the double patterning. MoSi-binary with HTRS meets the photomask technology requirements for 32-nm node and beyond.

Paper Details

Date Published: 1 April 2009
PDF: 8 pages
J. Micro/Nanolith. 8(2) 023001 doi: 10.1117/1.3116127
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 8, Issue 2
Show Author Affiliations
Masahiro Hashimoto, HOYA Corp. (Japan)
Hideaki Mitsui, HOYA Corp. (Japan)

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