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Journal of Micro/Nanolithography, MEMS, and MOEMS

Etching characteristics and mechanism of vanadium dioxide in inductively coupled Cl2/Ar plasma
Author(s): Tae-Hoon Lee; Alexander M. Efremov; Yong-Hyun Ham; Sun Jin Yun; Nam-Ki Min; Munpyo Hong; Kwang-Ho Kwon
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Paper Abstract

An investigation of a VO2 etch mechanism in Cl2/Ar inductively coupled plasma under the condition of low ion bombardment energy is carried out. It is found that an increase in Ar mixing ratio results a nonmonotonic VO2 etch rate, which reaches a maximum of 70 to 80 nm/min at 70 to 75% Ar. The model-based analysis of the etch mechanism shows that the VO2 etch kinetics correspond to the ion-flux-limited etch regime. This is most likely due to the domination of low volatile VCl3 and/or VCl2 in the reaction products.

Paper Details

Date Published: 1 April 2009
PDF: 5 pages
J. Micro/Nanolith. 8(2) 021110 doi: 10.1117/1.3100423
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 8, Issue 2
Show Author Affiliations
Tae-Hoon Lee, Korea Univ. (Korea, Republic of)
Alexander M. Efremov, Ivanovo State Univ. of Chemistry and Technology (Russian Federation)
Yong-Hyun Ham, Korea Univ. (Korea, Republic of)
Sun Jin Yun, Electronics and Telecommunications Research Institute (Korea, Republic of)
Nam-Ki Min, Korea Univ. (Korea, Republic of)
Munpyo Hong, Korea Univ. (Korea, Republic of)
Kwang-Ho Kwon, Korea Univ. (Korea, Republic of)


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