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Journal of Micro/Nanolithography, MEMS, and MOEMS

Free-standing C60 nanowire fabricated using XeF2 sacrificial dry etching
Author(s): Toshiyuki Tsuchiya; Yasutake Ura; Yomoya Jomori; Koji Sugano; Osamu Tabata
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Paper Abstract

We report a fabrication of doubly supported free-standing buckminsterfullerene (C60) nanowires onto single crystal silicon microstructures in order to demonstrate an integration of carbon nanomaterials to surface-micromachined microelectromechanical devices. By irradiating vacuum-deposited C60 film with an electron beam, polymerized C60 nanowires were patterned. Free-standing structures of the C60 nanowires were obtained by sacrificial etching of underlying silicon structures using XeF2 gas. The supporting 5-µm thick silicon structure was released using vapor hydrofluoric acid. The C60 nanowire of 2-µm width, 25-µm length, and 40-nm thickness connected to a movable single crystal silicon structure was successfully fabricated.

Paper Details

Date Published: 1 January 2009
PDF: 6 pages
J. Micro/Nanolith. 8(1) 013020 doi: 10.1117/1.3094745
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 8, Issue 1
Show Author Affiliations
Toshiyuki Tsuchiya, Kyoto Univ. (Japan)
Yasutake Ura, Kyoto Univ. (Japan)
Yomoya Jomori, Kyoto Univ. (Japan)
Koji Sugano, Kyoto Univ. (Japan)
Osamu Tabata, Kyoto Univ. (Japan)

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