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Journal of Nanophotonics

III-V compound semiconductor nanostructures on silicon: epitaxial growth, properties, and applications in light emitting diodes and lasers
Author(s): Zetian Mi; Yi-Lu Chang
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Paper Abstract

Significant developments have occurred in the area of III-V compound semiconductor nanostructures. The scope of developments includes quantum dots and nanowires epitaxially grown on Si substrates, as well as their applications in light emitting diodes and lasers. Such nanoscale heterostructures exhibit remarkable structural, electrical, and optical properties. The highly effective lateral stress relaxation, due to the presence of facet edges and free surfaces, enables the achievement of nearly defect-free III-V nanoscale heterostructures directly on Si, in spite of the large lattice mismatches and the surface incompatibility. With the incorporation of multiple quantum dot layers as highly effective three-dimensional dislocation filters, self-organized quantum dot lasers monolithically grown on Si exhibit, for the first time, relatively low threshold current (Jth = 900 A/cm2) and very high temperature stability (T0 = 244 K). III-V semiconductor nanowire light emitting diodes on Si, with emission wavelengths from UV to near-infrared, have also been demonstrated.

Paper Details

Date Published: 1 January 2009
PDF: 19 pages
J. Nanophoton. 3(1) 031602 doi: 10.1117/1.3081051
Published in: Journal of Nanophotonics Volume 3, Issue 1
Show Author Affiliations
Zetian Mi, McGill Univ. (Canada)
Yi-Lu Chang, McGill Univ. (Canada)

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