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Journal of Micro/Nanolithography, MEMS, and MOEMS

Fabrication of continuous V-grooves with Si(110) sidewalls using TiO2 resist mask by anisotropic wet etching
Author(s): Xiaoming Yu; Bingsen Zhang; Jing Guo; Huazhe Yang; Ying Zhang; Shimin Shen; Yang Qi
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Paper Abstract

Modification for substrate surface morphology is a kind of effective technique for controlling thin film growth orientation. In this work, continuous V-grooves are fabricated on monocrystalline Si(100) substrate using TiO2 resist mask by anisotropic wet etching. Influence of thickness of TiO2 resist mask on etching patterns is investigated. The integrity and cross section of V-grooves are observed by laser scanning confocal microscope (LSCM) and scanning electronic microscopy (SEM), respectively. The floccules precipitating in V-grooves are verified by an energy dispersive spectrometer (EDS). Results indicate that the Si(100) substrate surface is modified to the array of V-grooves along the Si[010] direction with Si(110) sidewalls.

Paper Details

Date Published: 1 January 2009
PDF: 5 pages
J. Micro/Nanolith. 8(1) 013012 doi: 10.1117/1.3074832
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 8, Issue 1
Show Author Affiliations
Xiaoming Yu, Northeastern Univ. (China)
Bingsen Zhang, Northeastern Univ. (China)
Jing Guo, Northeastern Univ. (China)
Huazhe Yang, Northeastern Univ. (China)
Ying Zhang, Northeastern Univ. (China)
Shimin Shen, Northeastern Univ. (China)
Yang Qi, Northeastern Univ. (China)


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