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Journal of Micro/Nanolithography, MEMS, and MOEMS

Litho-only double patterning approaches: positive–negative versus positive–positive tone
Author(s): Michael M. Crouse; Ryusuke Uchida; Youri van Dommelen; Tomoyuki Ando; Emil P. Schmitt-Weaver; Masaru Takeshita; Shunder Wu; Robert M. Routh
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Paper Abstract

Double patterning is considered the most viable option for 32- and 22-nm complementary metal-oxide semiconductor (CMOS) node development and has seen a surge of interest due to the remaining challenges of next-generation lithography systems. Most double patterning approaches previously described require intermediate processing steps (e.g., hard mask etching, resist freezing, spacer material deposition, etc.). These additional steps can add significantly to the cost of producing the double pattern. Alternative litho-only double patterning processes are investigated to achieve a composite image without the need for intermediate processing steps. A comparative study between positive–negative (TArF-P6239+N3007) and positive–positive tone (TArF-P6239+PP002) imaging is described. In brief, the positive–positive tone approach is found to be a superior solution due to a variety of considerations.

Paper Details

Date Published: 1 January 2009
PDF: 7 pages
J. Micro/Nanolith. 8(1) 011006 doi: 10.1117/1.3042219
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 8, Issue 1
Show Author Affiliations
Michael M. Crouse, ASML US, Inc. (United States)
Ryusuke Uchida, Tokyo Ohka Kogyo America, Inc. (United States)
Youri van Dommelen, ASML US, Inc. (United States)
Tomoyuki Ando, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Emil P. Schmitt-Weaver, ASML US, Inc. (United States)
Masaru Takeshita, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Shunder Wu, ASML US, Inc. (United States)
Robert M. Routh, ASML US, Inc. (United States)


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