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Journal of Micro/Nanolithography, MEMS, and MOEMS

Double-patterning requirements for optical lithography and prospects for optical extension without double patterning
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Paper Abstract

Double patterning (DP) has now become a fixture on the development roadmaps of many device manufacturers for half pitches of 32 nm and beyond. Depending on the device feature, different types of DP and double exposure (DE) are being considered. This paper focuses on the requirements of the most complex forms of DP, pitch-splitting (where line density is doubled through two exposures) and spacer processes (where a deposition process is used to achieve the final pattern). Budgets for critical dimension uniformity and overlay are presented along with tool and process requirements to achieve these budgets. Experimental results showing 45-nm lines and spaces using dry ArF lithography with a k1 factor of 0.20 are presented to highlight some of the challenges. Finally, alternatives to DP are presented.

Paper Details

Date Published: 1 January 2009
PDF: 11 pages
J. Micro/Nanolith. 8(1) 011003 doi: 10.1117/1.3023077
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 8, Issue 1
Show Author Affiliations
Andrew J. Hazelton, Nikon Corp. (Japan)
Shinji Wakamoto, Nikon Corp. (Japan)
Shigeru Hirukawa, Nikon Corp. (Japan)
Martin McCallum, Nikon Precision Europe GmbH (United Kingdom)
Nobutaka Magome, Nikon Corp. (Japan)
Jun Ishikawa, Nikon Corp. (Japan)
Céline Lapeyre, Commissariat à l'Energie Atomique (France)
Isabelle Guilmeau, Commissariat à l'Energie Atomique (France)
Sébastien Barnola, Commissariat à l'Energie Atomique (France)
Stéphanie Gaugiran, Commissariat à l'Energie Atomique (France)


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