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Journal of Micro/Nanolithography, MEMS, and MOEMS

High-accuracy correction of critical dimension errors appearing in large-scale integration fabrication processes
Author(s): Takayuki Abe; Jun Yashima; Hayato Shibata
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Paper Abstract

In our previous paper, we proposed a new method to obtain accurate pattern dimensions for correcting global critical dimension (CD) errors, which are defined as errors of CD uniformity in a region of several millimeters to several centimeters. The method is based on the pattern modulation method [a method of correcting CD errors by controlling figure sizes of large-scale integration (LSI) patterns]. An essential point of our method is to take into account the difference between the pattern density of the original LSI pattern and that of the corrected pattern (which has a pattern dimension different from original one after pattern modulation for correction) to provide an accurate correction. In this paper, we apply the proposed method to correct CD errors caused by flare and microloading effects. It is shown from numerical calculations that our method can suppress the correction error to less than 0.1 nm for both cases by three iterations. It is strongly recommended that our method be used for a wide range of applications to provide the necessary CD accuracies of the future.

Paper Details

Date Published: 1 April 2008
PDF: 9 pages
J. Micro/Nanolith. MEMS MOEMS 7(2) 023006 doi: 10.1117/1.2909474
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 7, Issue 2
Show Author Affiliations
Takayuki Abe, NuFlare Technology, Inc. (Japan)
Jun Yashima, NuFlare Technology, Inc. (Japan)
Hayato Shibata, NuFlare Technology, Inc. (Japan)

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