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Journal of Micro/Nanolithography, MEMS, and MOEMS

Exposure and development of thick polydimethylglutarimide films for MEMS applications using 254-nm irradiation
Author(s): Ian G. Foulds; Robert William Johnstone; See-Ho Tsang; M. Pallapa
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Paper Abstract

Polydimethylglutarimide (PMGI)-based resists are finding increasing use in microelectromechanical systems (MEMS) as both sacrificial and structural materials. PMGI-based resists are commercially available and were originally designed for use in bilayer lift-off applications. Literature on deep-UV exposure and development of PMGI films is limited to films less than 2.5 μm in thickness, and use only tetramethylammonium hydroxide (TMAH)-based developers. We investigate the exposure and development of PMGI films greater than 6 μm in thickness using the two main classes of developer for PMGI, TMAH, and tetraethylammonium hydroxide (TEAH)-based developers. At these thicknesses, a nonuniform dose through the film due to the optical absorption of the PMGI leads to large gradients in the dissolution properties. We report etch rates as a function of surface dose and development time. Additionally a model is developed to provide a basic predictor of development depth and other important data for fabrication process planning and development.

Paper Details

Date Published: 1 April 2008
PDF: 8 pages
J. Micro/Nanolith. MEMS MOEMS 7(2) 023003 doi: 10.1117/1.2909468
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 7, Issue 2
Show Author Affiliations
Ian G. Foulds, Simon Fraser Univ. (Canada)
Robert William Johnstone, Simon Fraser Univ. (Canada)
See-Ho Tsang, Simon Fraser Univ. (Canada)
M. Pallapa, Simon Fraser Univ. (Canada)

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