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Journal of Nanophotonics

Luminescence of black silicon
Author(s): Ali Serpengüzel; Adnan Kurt; Ibrahim Inanc; James E. Cary; Eric D. Mazur
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Paper Abstract

Room temperature visible and near-infrared photoluminescence from black silicon has been observed. The black silicon is manufactured by shining femtosecond laser pulses on silicon wafers in air, which were later annealed in vacuum. The photoluminescence is quenched above 120 K due to thermalization and competing nonradiative recombination of the carriers. The photoluminescence intensity at 10K depends sublinearly on the excitation laser intensity confirming band tail recombination at the defect sites.

Paper Details

Date Published: 1 February 2008
PDF: 9 pages
J. Nanophoton. 2(1) 021770 doi: 10.1117/1.2896069
Published in: Journal of Nanophotonics Volume 2, Issue 1
Show Author Affiliations
Ali Serpengüzel, Koç Univ. (Turkey)
Adnan Kurt, Koç Univ. (Turkey)
Ibrahim Inanc, Sabanci Univ. (Turkey)
James E. Cary, SiOnyx, Inc. (United States)
Eric D. Mazur, Harvard Univ. (United States)


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