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Journal of Nanophotonics

Near-infrared near-field photoluminescence imaging spectroscopy of exciton localized states in GaInNAs/GaAs quantum wells due to nonuniform distribution of nitrogen
Author(s): Ryosuke Kubota; Koji Nakashima; Dai Mizuno; Toshiharu Saiki; Masaru Sakai; Kazunari Matsuda; Takashi Ishizuka
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Paper Abstract

The nonuniform distribution of nitrogen in dilute GaInNAs alloys was investigated by low-temperature near-field photoluminescence (PL) imaging spectroscopy of localized states driven by giant band-gap reduction due to nitrogen incorporation. The depths and spatial profiles of exciton confinement potential were visualized through the measurement of power-dependent PL spectra and high-resolution PL images. For two GaInNAs quantum wells with different nitrogen contents, we observed strongly localized excitons confined in nitrogen clusters and rather delocalized excitons, which indicate the onset of alloy formation.

Paper Details

Date Published: 1 November 2007
PDF: 6 pages
J. Nanophoton. 1(1) 011592 doi: 10.1117/1.2816112
Published in: Journal of Nanophotonics Volume 1, Issue 1
Show Author Affiliations
Ryosuke Kubota, Keio Univ. (Japan)
Koji Nakashima, Keio Univ. (Japan)
Dai Mizuno, Keio Univ. (Japan)
Toshiharu Saiki, Kanagawa Academy of Science and Technology (Japan)
Masaru Sakai, Kanagawa Academy of Science and Technology (Japan)
Kazunari Matsuda, Kanagawa Academy of Science and Technology (Japan)
Takashi Ishizuka, Sumitomo Electric Industries, Ltd. (Japan)


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