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Journal of Micro/Nanolithography, MEMS, and MOEMS

Exposure dose dependence on line edge roughness of a latent image in electron beam/extreme ultraviolet lithographies studied by Monte Carlo technique
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Paper Abstract

Of great importance in post-optical lithographies, such as electron beam (EB) and extreme ultraviolet, is the improvement of line edge roughness or line width roughness of patterned resists. We provide an exposure dose dependence on LER of a latent image in chemically amplified EB resist from 1 to 50 μC/cm2. By using a Monte Carlo simulation and empirical equations, the effects of exposure dose and amine concentration on LER are investigated in terms of shot noise and image contrast. We make clear the correlation between LER and the fluctuation of the initial number of acid molecules generated in resists.

Paper Details

Date Published: 1 October 2007
PDF: 6 pages
J. Micro/Nanolith. 6(4) 043004 doi: 10.1117/1.2792178
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 6, Issue 4
Show Author Affiliations
Akinori Saeki, Osaka Univ. (Japan)
Takahiro Kozawa, Osaka Univ. (Japan)
Seiichi Tagawa, Osaka Univ. (Japan)
Heidi B. Cao, Intel Corp. (United States)
Hai Deng, Intel Corp. (United States)
Michael J. Leeson, Intel Corp. (United States)

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