Share Email Print

Journal of Micro/Nanolithography, MEMS, and MOEMS

Complementary dose and geometrical solutions for electron beam direct write lithography proximity effects correction: application for sub-45-nm node product manufacturing
Format Member Price Non-Member Price
PDF $20.00 $25.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

After the successful results obtained in the last few years, electron beam direct write (EBDW) lithography for use in integrated circuit manufacturing has now been demonstrated. However, throughput and resolution capabilities need to be improved to push its interest for fast cycle production and advanced research and development applications. In this way, the process development needs good patterns dimensional accuracy, i.e., a better control of the proximity effects caused by backscattering electrons and others phenomenon. In this work, the limitations of the dose modulation method are investigated through the change of dose number steps and the use of a more accurate point spread function. To continue reducing feature sizes, a method to provide a complementary correction to the dose modulation solution is proposed. This rule-based electron beam proximity correction, or REBPC, provides good results down to 40 nm.

Paper Details

Date Published: 1 July 2007
PDF: 7 pages
J. Micro/Nanolith. MEMS MOEMS 6(3) 033001 doi: 10.1117/1.2770472
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 6, Issue 3
Show Author Affiliations
Serdar Manakli, STMicroelectronics (France)
C. Soonekindt, Philips Semiconductors (France)
Laurent Pain, STMicroelectronics (France)
J. C. Le Denmat, STMicroelectronics (France)
Jerome Todeschini, Philips Semiconductors (France)
B. Icard, Lab. d'Electronique de Technologie de l'Information (France)
B. Minghetti, STMicroelectronics (France)

© SPIE. Terms of Use
Back to Top